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back sheet polymer foil or any other materials that protect crystalline Si cells in PV modules can be tested with this method
3）のネットワークをSEMI E54
SEMI M84-0414 (first published)
This Document does not describe measurement procedures
M09300 - SEMI M93 - Test Method for Quantifying Basal Plane Dislocation Density in 4H-SiC by X-Ray Diffraction Topography/Imaging Revision:SEMI M93-0923 - Superseded back sheet polymer foil orBasal plane dislocations (BPDs) are detrimental for devices manufactured on 4H SiC substrates, especially for bipolar devices for power electronics. Most BPDs are transformed into threading edge dislocations (TEDs) when growing epitaxial layers on top of 4H SiC substrates, but a small fraction is also transferred into the epitaxial layer or may result in the formation of stacking faults (SFs), both being critical defects potentially causing device
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