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PV03900 - SEMI PV39 - Test Method for In-Line Measurement of Cracks in PV Silicon Wafers by Dark Field Infrared Imaging StdPbc-0117 SEMI MF1529-1110 (technical revision)

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Description

SEMI MF1529-1110 (technical revision)

1  The SEMI E49 Subordinate Standards are organized by types of piping distribution systems: gas

mating pedestal bases

bumps or waves on the wafer surface that vary in peak to valley height from a few nanometers to a several hundred nanometers

PV03900 - SEMI PV39 - Test Method for In-Line Measurement of Cracks in PV Silicon Wafers by Dark Field Infrared Imaging StdPbc-0117 SEMI MF1529-1110 (technical revision)Silicon (Si) wafers for PV applications cut from a Si ingot or Si brick by multiple wire sawing contain artifacts characteristic for this cutting process, so called saw marks. The saw marks consist of topographic features, such as grooves, steps (see Related Information 2), on or in the Si wafer surface and that extend along the wire direction. Saw marks may significantly impact the quality of wafers. They interfere with printing the contact fingers

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